The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 16, 2008
Filed:
Sep. 07, 2004
Chieh Chen, Palo Alto, CA (US);
Atul Kumar, Santa Clara, CA (US);
Yuri Pikovsky, San Jose, CA (US);
Chung J. Lee, Fremont, CA (US);
Chieh Chen, Palo Alto, CA (US);
Atul Kumar, Santa Clara, CA (US);
Yuri Pikovsky, San Jose, CA (US);
Chung J. Lee, Fremont, CA (US);
Dielectric Systems, Inc., Fremont, CA (US);
Abstract
A method of forming a hybrid inorganic/organic dielectric layer on a substrate for use in an integrated circuit is provided, wherein the method includes forming a first dielectric layer on the substrate via chemical vapor deposition, and forming a second dielectric layer on the first dielectric layer via chemical vapor deposition, wherein one of the first dielectric layer and the second dielectric layer is formed from an organic dielectric material, and wherein the other of the first dielectric layer and the second dielectric layer is formed from an inorganic dielectric material.