The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 16, 2008
Filed:
Oct. 30, 2003
Stefan Bader, Eilsbrunn, DE;
Hans-jurgen Lugauer, Sinzing, DE;
Volker Haerle, Laaber, DE;
Berthold Hahn, Hemau, DE;
Stefan Bader, Eilsbrunn, DE;
Hans-Jurgen Lugauer, Sinzing, DE;
Volker Haerle, Laaber, DE;
Berthold Hahn, Hemau, DE;
Osram Opto Semiconductor GmbH, Regensburg, DE;
Abstract
The deposition of material () on a growth area () may be highly temperature-sensitive. In order to reduce temperature inhomogeneities on the growth area () of a substrate wafer (), a thermal radiation absorption layer () is applied on a rear side () of the substrate wafer () lying opposite to the growth area (). The thermal radiation absorption layer () exhibits good radiation absorption in the spectral range of a heating source. Since the deposition of semiconductor materials, in particular AllnGaN, may lead to (depending on the deposition temperature) different emission wavelengths of the deposited material, the use of a thermal radiation absorption layer () may produce a narrower emission wavelength distribution of the deposited material ().