Power mesh for multiple frequency operation of semiconductor products

Abstract

The design of integrated circuits, i.e., semiconductor products, is made easier with a semiconductor platform having versatile power mesh that is capable of supporting simultaneous operations having different frequencies on the semiconductor product; e.g., higher frequency operations may be embedded as diffused blocks within the lower layers or may be programmed from a configurable transistor fabric above the diffused layers. Preferably the power mesh is located above the layers having the operations requiring the different frequencies, and may be fixed in an application set given to a chip designer or may be configurable by the designer her/himself. For example, to support high speed communications adjacent an embedded high speed data transceiver, the transistor fabric may be programmed as a data link layer having higher performance requirements than the rest of the integrated circuit. The data link layer may be connected to one of the localized grids of the versatile power mesh which may have an increased density and/or wider strap width of a power/ground grid. Additional decoupling capacitance can be embedded in the lower layers of the semiconductor product and/or can be programmed from the configurable transistors fabric.