The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 09, 2008

Filed:

Apr. 17, 2006
Applicant:

Shinichi Terada, Kyoto, JP;

Inventor:

Shinichi Terada, Kyoto, JP;

Assignee:

Technos Co., ltd., Osaka, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G01N 23/223 (2006.01);
U.S. Cl.
CPC ...
Abstract

An apparatus and method for accurately analyzing transition metal such as iron and copper contained as impurities in a hafnium-containing film on a semiconductor substrate, which is a sample, is provided. Ir-Lα rays selected and split by a monochromator from X rays generated from an X-ray tube having an anode containing iridium, is applied to the sample so as to totally reflect on a hafnium film of the sample, and the fluorescent X rays generated in a direction other than the total reflection direction are detected by a detector. This makes it possible not only to detect Fe—Kα rays, but also to suppress generation of Hf-Lα rays which interferes with detection of Cu—K rays, and to shift the upper limit energy of the Raman scattering to be small so as to cancel overlapping with Cu—K rays.


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