The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 09, 2008
Filed:
Apr. 30, 2007
Haruo Kojima, Kanagawa-ken, JP;
Haruo Kojima, Kanagawa-ken, JP;
Kabushiki Kaisha Toshiba, Tokyo, JP;
Abstract
A first power sourcefor supplying a bias voltage to a gate electrode G of a field effect transistor, which amplifies high-frequency signals, and a second power sourcefor supplying a bias voltage to a drain electrode D of the field effect transistorare provided. The protective resistanceis connected between the gate electrode G of the field effect transistorand the first power source, and the bias voltage controlleris connected between the drain electrode D of the field effect transistorand the second power source. Further, a voltage detectoris connected between both ends of the protective resistanceto detect a voltage drop generated between both ends of the protective resistance, when a rectified current flows to the gate electrode G from the drain electrode D of the field effect transistor