The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 09, 2008

Filed:

Dec. 05, 2005
Applicants:

Jeffrey K. Hunter, Olathe, KS (US);

Timothy P. Gibson, Overland Park, KS (US);

Adam C. Eckhardt, Olathe, KS (US);

Inventors:

Jeffrey K. Hunter, Olathe, KS (US);

Timothy P. Gibson, Overland Park, KS (US);

Adam C. Eckhardt, Olathe, KS (US);

Assignee:

Honeywell International Inc., Morristown, NJ (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H03F 3/04 (2006.01);
U.S. Cl.
CPC ...
Abstract

Disclosed is a system and method for compensating for the effects of aging and temperature on the performance of transistors in an RF transmitter. The system and method use a temperature-based polynomial and a feedback control loop to correlate the drain current of each transistor with the desired performance characteristics of each transistor. The present invention measures drain current and temperature of the transistor; compares the measured drain current with the desired drain current, which corresponds to the desired performance characteristics; computes a transistor bias voltage based on the temperature and a control parameter, wherein the control parameter is adjustable based on the measured drain current; and applies the bias voltage to the transistor. The process may be repeated, with the control parameter adjusted with each iteration, until the desired drain current is reached.


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