The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 09, 2008
Filed:
Oct. 06, 2006
Method for reducing word line current in magnetoresistive random access memory and structure thereof
Applicants:
James Chyi Lai, St. Paul, MN (US);
Tom Allen Agan, St. Paul, MN (US);
Inventors:
James Chyi Lai, St. Paul, MN (US);
Tom Allen Agan, St. Paul, MN (US);
Assignee:
Northern Lights Semiconductor Corp., St. Paul, MN (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/82 (2006.01); H01L 43/00 (2006.01);
U.S. Cl.
CPC ...
Abstract
The method for reducing word line currents in magnetoresistive random access memory (MRAM) includes disposing the MRAM bit between a pair of word lines according to a magnetic field strength is increased when a distance between a magnetic section and its corresponding word line is decreased.