The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 09, 2008
Filed:
May. 12, 2005
Sachiko Kawaji, Owariasahi, JP;
Masayasu Ishiko, Nagoya, JP;
Takahide Sugiyama, Aichi-gun, JP;
Masanori Usui, Seto, JP;
Jun Saito, Toyota, JP;
Koji Hotta, Nishikamo-gun, JP;
Sachiko Kawaji, Owariasahi, JP;
Masayasu Ishiko, Nagoya, JP;
Takahide Sugiyama, Aichi-gun, JP;
Masanori Usui, Seto, JP;
Jun Saito, Toyota, JP;
Koji Hotta, Nishikamo-gun, JP;
Kabushiki Kaisha Toyota Chuo Kenkyusho, Aichi, JP;
Toyota Jidosha Kabushiki Kaisha, Toyota, JP;
Abstract
The dense accumulation of hole carriers can be obtained over a wide range of a semiconductor region in a floating state formed within a body region of an IGBT. An n type semiconductor region () whose potential is floating is formed within a ptype body region (). The n type semiconductor region () is isolated from an ntype emitter region () and an ntype drift region () by the body region (). Furthermore, a second electrode () is formed, so as to oppose to at least a part of the semiconductor region () via an insulator film (). The second electrode () does not oppose to the emitter region ().