The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 09, 2008
Filed:
May. 06, 2004
Anco Heringa, Waalre, NL;
Raymond J. E. Hueting, Helmond, NL;
Jan W. Slotboom, Eersel, NL;
NXP B.V., Eindhoven, NL;
Abstract
A semiconductor device, for example a diode (), having a pn junction () has an insulating material field shaping region () adjacent, and possibly bridging, the pn junction. The field shaping region () preferably has a high dielectric constant and is coupled via capacitive voltage coupling regions () to substantially the same voltages as are applied to the pn junction. When a reverse voltage is applied across the pn junction () and the device is non-conducting, a capacitive electric field, is present in a part of the field shaping region which extends beyond a limit of the pn junction depletion region which would exist in the absence of the field shaping region (), the electric field in the field shaping region inducing a stretched electric field limited to a correspondingly stretched pn junction depletion region () and an increased reverse breakdown voltage of the device.