The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 09, 2008
Filed:
Feb. 24, 2006
Applicants:
Youichi Nagai, Osaka, JP;
Koji Katayama, Itami, JP;
Hiroyuki Kitabayashi, Itami, JP;
Inventors:
Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/06 (2006.01); H01L 31/0328 (2006.01); H01L 31/0336 (2006.01); H01L 31/072 (2006.01); H01L 31/109 (2006.01); H01L 29/08 (2006.01); H01L 39/22 (2006.01); H01L 27/15 (2006.01); H01L 29/267 (2006.01); H01L 31/12 (2006.01); H01L 33/00 (2006.01); H01L 29/22 (2006.01);
U.S. Cl.
CPC ...
Abstract
A light-emitting device includes a GaN substrate; a n-type AlGaN layer on a first main surface side of the GaN substrate; a p-type AlGaN layer positioned further away from the GaN substrate compared to the n-type AlGaN layer; a multi-quantum well (MQW) positioned between the n-type AlGaN layer and the p-type AlGaN layer. In this light-emitting device, the p-type AlGaN layer side is down-mounted and light is emitted from the second main surface, which is the main surface of the GaN substrate opposite from the first main surface. hemispherical projections are formed on the second main surface of the GaN substrate.