The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 02, 2008
Filed:
Jul. 18, 2003
Yeshaiahu Fainman, San Diego, CA (US);
Wataru Nakagawa, Palos Park, IL (US);
Chyong-hua Chen, La Jolla, CA (US);
Pang-chen Sun, San Diego, CA (US);
Lin Pang, San Diego, CA (US);
Yeshaiahu Fainman, San Diego, CA (US);
Wataru Nakagawa, Palos Park, IL (US);
Chyong-Hua Chen, La Jolla, CA (US);
Pang-Chen Sun, San Diego, CA (US);
Lin Pang, San Diego, CA (US);
The Regents of the University of California, Oakland, CA (US);
Abstract
The invention is directed to a method for etching a solid state material to create a surface relief pattern. A resist layer is formed on the surface of the solid state material. The photoresist layer is holographically patterned to form a patterned mask. The pattern is then transferred into the solid state material by a dry etching process. The invention is especially useful for forming optical nanostructures. In preferred embodiments, a direct write process, such as ebeam lithography, is used to define defects and functional elements, such as waveguides and cavities.