The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 02, 2008
Filed:
May. 30, 2006
Shoji Ozoe, Chita-gun, JP;
Tomofusa Shiga, Nukata-gun, JP;
Yoshifumi Okabe, Anjo, JP;
Takaaki Aoki, Okazaki, JP;
Takeshi Fukazawa, Nagoya, JP;
Kimiharu Kayukawa, Nisshin, JP;
Shoji Ozoe, Chita-gun, JP;
Tomofusa Shiga, Nukata-gun, JP;
Yoshifumi Okabe, Anjo, JP;
Takaaki Aoki, Okazaki, JP;
Takeshi Fukazawa, Nagoya, JP;
Kimiharu Kayukawa, Nisshin, JP;
DENSO CORPORATION, Kariya, JP;
Abstract
A vertical type semiconductor device includes: a silicon substrate having a first surface and a second surface; a first electrode disposed on the first surface of the silicon substrate; and a second electrode disposed on the second surface of the silicon substrate. Current is capable of flowing between the first electrode and the second electrode in a vertical direction of the silicon substrate. The second surface of the silicon substrate includes a re-crystallized silicon layer. The second electrode includes an aluminum film so that the aluminum film contacts the re-crystallized silicon layer with ohmic contact.