The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 02, 2008
Filed:
Dec. 19, 2005
Tae-jin Kim, Suwon-si, KR;
Kwang-joon Yoon, Seoul, KR;
Phil-jae Chang, Seoul, KR;
Kye-won Maeng, Seoul, KR;
Young-jun Park, Suwon-si, KR;
Tae-Jin Kim, Suwon-si, KR;
Kwang-Joon Yoon, Seoul, KR;
Phil-Jae Chang, Seoul, KR;
Kye-Won Maeng, Seoul, KR;
Young-Jun Park, Suwon-si, KR;
Samsung Electronics Co., Ltd., Suwon-si, Gyeonggi-do, KR;
Abstract
A photo-detecting device includes a buried doping layer of a first conductivity type and disposed at an upper portion of a silicon substrate. A first silicon epitaxial layer of first conductivity type is disposed on the buried doping layer, and a second silicon epitaxial layer of second conductivity type is disposed on the first silicon epitaxial layer. An isolation doping layer doped of first conductivity type is disposed at a predetermined region of the second silicon epitaxial layer to define a body region of second conductivity type. A silicon germanium epitaxial layer of second conductivity type is disposed on the body region.