The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 02, 2008

Filed:

Apr. 24, 2006
Applicant:

Sadeg M. Faris, Pleasantville, NY (US);

Inventor:

Sadeg M. Faris, Pleasantville, NY (US);

Assignee:

Reveo, Inc., Hawthorne, NY (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01J 40/14 (2006.01);
U.S. Cl.
CPC ...
Abstract

A method of fabricating a multichannel plate is provided. The method includes providing a N layers, each layer having an array of wells formed therein. The N layers are aligned and stacked. The stack of N layers are sliced along a first and second line of the array of wells. The first line of the array of wells provides a first surface corresponding to a first array of channel openings of the MCP, and the second line of said array of wells provides a second surface corresponding to a second array of channel openings of the MCP. This method provides several functional benefits compared to conventional methods. These include, but are not limited to: the ability to produce well known and well characterized channels; the ability to produce well known and well characterized periods between channels; the ability to produce channels having any desired secondary electron emission enabling material therein; the ability to fabricate the substrate and/or final MCP of silicon.


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