The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 02, 2008

Filed:

Feb. 17, 2005
Applicants:

Margaret H. Abraham, Los Angeles, CA (US);

Henry Helvajian, Pasadena, CA (US);

Siegfried W. Janson, Redondo Beach, CA (US);

Inventors:

Margaret H. Abraham, Los Angeles, CA (US);

Henry Helvajian, Pasadena, CA (US);

Siegfried W. Janson, Redondo Beach, CA (US);

Assignee:

The Aerospace Corporation, El Segundo, CA (US);

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/302 (2006.01);
U.S. Cl.
CPC ...
Abstract

A method using an etchant and a laser for localized precise heating enables precise etching and release of MEMS devices with improved process control while expanding the number of materials used to make MEMS, including silicon-dioxide patterned films buried in and subsequently released from bulk silicon, as a direct write method of release of patterned structures that enables removal of only that material needed to allow the device to perform to be precisely released, after which, the bulk material can be further processed for additional electrical or packaging functions.


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