The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 02, 2008
Filed:
May. 02, 2005
Applicant:
Seung Woo Shin, Kyeongki-Do, KR;
Inventor:
Seung Woo Shin, Kyeongki-Do, KR;
Assignee:
Hynix Semiconductor Inc., Kyoungki-do, KR;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/00 (2006.01); H01L 21/44 (2006.01);
U.S. Cl.
CPC ...
Abstract
Provided is a method of manufacturing a flash memory device. In the method, after forming a cell string and source/drain selection transistors, it forms a first oxide film in which a sidewall oxide film and a buffering oxide film are stacked, a nitride film, and a second oxide film for spacer on the overall structure. Then, source/drain contact holes are formed. Thus, the source/drain selection transistors are prevented from being exposed while etching the source/drain contact holes, which enhances the reliability of the flash memory device.