The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 02, 2008
Filed:
Mar. 17, 2003
Youmei Shinagawa, Mobara, JP;
Akio Mimura, Hitachinaka, JP;
Genshiro Kawachi, Mobara, JP;
Takeshi Satoh, Hitachi, JP;
Youmei Shinagawa, Mobara, JP;
Akio Mimura, Hitachinaka, JP;
Genshiro Kawachi, Mobara, JP;
Takeshi Satoh, Hitachi, JP;
Hitachi, Ltd., Tokyo, JP;
Abstract
A crystalline semiconductor having an even surface and a large crystal grain size is formed on an economical glass substrate using a laser crystallizing technology. A series of processes, including forming an insulation film on a glass substrate; forming a semiconductor film in the first layer; crystallizing the semiconductor film in the first layer by irradiating laser light stepwise from weak energy laser light to strong energy laser light; forming a semiconductor film in a second layer having a film thickness thinner than that of the semiconductor film in the first layer; performing laser crystallization of the semiconductor thin film in the second layer by irradiating laser light stepwise from weak energy laser light to strong energy laser light, are continuously performed without exposing the workpiece to the atmosphere.