The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 02, 2008
Filed:
Jul. 26, 2007
Shinya Kumagai, Kyoto, JP;
Shigeo Yoshii, Osaka, JP;
Nozomu Matsukawa, Nara, JP;
Ichiro Yamashita, Nara, JP;
Shinya Kumagai, Kyoto, JP;
Shigeo Yoshii, Osaka, JP;
Nozomu Matsukawa, Nara, JP;
Ichiro Yamashita, Nara, JP;
Matsushita Electric Industrial Co., Ltd., Osaka, JP;
Abstract
The present invention provides a method for production of a single electron semiconductor element (SET) in which a quantum dot is selectively arranged in a nano gap between fine electrodes, whereby the product yield is significantly improved, leading to excellent practical applicability. The method for production of SET of the present invention is characterized in that a solution containing ferritin including a metal or semiconductor particle therein, and a nonionic surfactant is dropped on a substrate having a source electrode and a drain electrode formed by laminating a titanium film and a film of a metal other than titanium, whereby the ferritin is selectively arranged in a nano gap between the source electrode/drain electrode.