The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 02, 2008

Filed:

Aug. 29, 2005
Applicants:

Chul-min Park, Suwon-si, KR;

Hong-sik Park, Seoul, KR;

Hyoung-soo Ko, Seoul, KR;

Seung-bum Hong, Seongnam-si, KR;

Inventors:

Chul-min Park, Suwon-si, KR;

Hong-sik Park, Seoul, KR;

Hyoung-soo Ko, Seoul, KR;

Seung-bum Hong, Seongnam-si, KR;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/00 (2006.01);
U.S. Cl.
CPC ...
Abstract

A method of manufacturing a semiconductor probe having a resistive tip. The method includes forming first and second mask films having a rectangular shape on a silicon substrate, first etching an upper surface of the silicon substrate, forming a third mask film corresponding to a width of a tip neck by etching the first mask film, forming the width of the tip neck to a predetermined width by second etching of the silicon substrate using the third mask film as a mask, and forming a peak forming portion of the tip by annealing the silicon substrate after removing the third mask film. A semiconductor probe having a uniform height and tips having a uniform neck width can be manufactured.


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