The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 02, 2008
Filed:
Nov. 23, 2005
Shigeo Yoshii, Hirakata, JP;
Michihito Ueda, Kyoto, JP;
Nozomu Matsukawa, Nara, JP;
Ichiro Yamashita, Nara, JP;
Shigeo Yoshii, Hirakata, JP;
Michihito Ueda, Kyoto, JP;
Nozomu Matsukawa, Nara, JP;
Ichiro Yamashita, Nara, JP;
Matsushita Electric Industrial Co., Ltd., Osaka, JP;
Abstract
An object of the present invention is to provide a method of forming fine particles on a substrate in which reoxidization of reduced fine particles is suppressed. Reduced fine particles (FeO fine particles) are formed by embedding metal oxide fine particles (FeOfine particles) fixed on a p type silicon semiconductor substrate into a silicon oxidized film, and carrying out a heat treatment in a reducing gas atmosphere. Presence of the silicon oxidized film enables suppression of reoxidization of the reduced fine particles (FeO fine particles) due to exposure to the ambient air.