The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 7418777 B1

PDF
Full Text
Expired
Date of Patent:
Sep. 02, 2008

Filed:

May. 05, 2005
Applicants:

Hajime Amano, Chuo-Ku, JP;

Hiroaki Takezutsumi, Chuo-ku, JP;

Tetsuro Sasaki, Chuo-ku, JP;

Jun-ichi Sato, Chuo-ku, JP;

Inventors:

Hajime Amano, Chuo-Ku, JP;

Hiroaki Takezutsumi, Chuo-ku, JP;

Tetsuro Sasaki, Chuo-ku, JP;

Jun-ichi Sato, Chuo-ku, JP;

Assignee:

TDK Corporation, Tokyo, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11B 5/127 (2006.01); H04R 31/00 (2006.01);
U.S. Cl.
CPC ...
Abstract

A method of manufacturing a spin valve film, produces a large read out signal. After a completion of a film making process for forming a previous film of two films to be formed successively, but before an initiation of a film making process for forming a succeeding film of the two films, a step of decreasing an anisotropic magnetic field of the spin valve film is introduced by interrupting a film making process. This step may be performed by keeping a substrate within a sputtering vacuum chamber. The interruption can be shortened by exposing the substrate to a plasma, transferring the substrate in a separate vacuum chamber is lower or whose HO or Oconcentration is higher than that in the sputtering vacuum chamber, conducting a surface treatment with a gas containing HO or O, or flowing a process gas.


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