The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 7417910 B1

PDF
Full Text
Expired
Date of Patent:
Aug. 26, 2008

Filed:

May. 18, 2005
Applicants:

Hee-bok Kang, Ichon-shi, KR;

Jin-hong Ahn, Ichon-shi, KR;

Inventors:

Hee-Bok Kang, Ichon-shi, KR;

Jin-Hong Ahn, Ichon-shi, KR;

Assignee:

Hynix Semiconductor Inc., Kyoungki-Do, KR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 7/00 (2006.01); G11C 5/14 (2006.01); G11C 7/02 (2006.01);
U.S. Cl.
CPC ...
Abstract

A semiconductor memory device having a cell array area for reading or storing data, including: a normal cell block including a plurality of normal cells, each being coupled to one of a bit line and a bit line bar for storing a data; a reference cell block including a plurality of reference cell units, each including a reference capacitor, a first reference metal oxide semiconductor (MOS) transistor for connecting the reference capacitor to the bit line, and a second reference MOS transistor for connecting the reference capacitor to the bit line bar; and a third reference MOS transistor coupled to the reference cell block for charging the reference capacitor with a reference voltage.


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Kang, Hee-Bok. (2008). Low voltage semiconductor memory device (U.S. Patent No. 7417910). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/7417910

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