The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 26, 2008
Filed:
Dec. 07, 2006
Byoung Gon Yu, Daejeon, KR;
Seung Yun Lee, Daejeon, KR;
Sangouk Ryu, Daejeon, KR;
Sung Min Yoon, Daejeon, KR;
Young Sam Park, Daejeon, KR;
Kyu Jeong Choi, Daejeon, KR;
Nam Yeal Lee, Daejeon, KR;
Byoung Gon Yu, Daejeon, KR;
Seung Yun Lee, Daejeon, KR;
Sangouk Ryu, Daejeon, KR;
Sung Min Yoon, Daejeon, KR;
Young Sam Park, Daejeon, KR;
Kyu Jeong Choi, Daejeon, KR;
Nam Yeal Lee, Daejeon, KR;
Electronics and Telecommunications Research Institute, Daejeon, KR;
Abstract
Provided is a phase change memory device including: a phase change memory unit comprising a phase change layer pattern; a laser beam focusing unit locally focusing a laser beam on the phase change layer pattern of the phase change memory unit; and a semiconductor laser unit generating and emitting the laser beam towards the laser beam focusing unit. Thus set or reset operations in the phase change memory device uses laser beams locally applied, thereby reducing the consumption power and preventing destruction or change in information stored in neighboring cell during the operations of unit cell.