The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 26, 2008
Filed:
Dec. 19, 2005
Beak-hyung Cho, Hwaseong-si, KR;
Jong-soo Seo, Hwaseong-si, KR;
Du-eung Kim, Yongin-si, KR;
Woo-yeong Cho, Suwon-si, KR;
Beak-hyung Cho, Hwaseong-si, KR;
Jong-soo Seo, Hwaseong-si, KR;
Du-eung Kim, Yongin-si, KR;
Woo-yeong Cho, Suwon-si, KR;
Samsung Electronics Co., Ltd., Suwon-si, Gyeonngi-do, KR;
Abstract
A method and device for driving the word lines of a phase change memory device is provided. The method may include applying a first voltage level to non-selected word lines and a second voltage level to selected word lines during a normal operational mode, and placing the word lines in a floating state during a standby operational mode. The phase change memory device may include a plurality of word line drive circuits for driving corresponding word lines, where each of the plurality of word line drive circuits includes a drive unit which sets a corresponding word line to a first voltage level or a second voltage level in response to a first control signal, and a mode selector which selectively applies the first voltage level to the driving unit according to an operational mode of the phase change memory device.