The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 26, 2008

Filed:

Jul. 14, 2005
Applicants:

Akio Kawabata, Kawasaki, JP;

Mizuhisa Nihei, Kawasaki, JP;

Masahiro Horibe, Tsukuba, JP;

Shintaro Sato, Kawasaki, JP;

Daiyu Kondo, Kawasaki, JP;

Yuji Awano, Kawasaki, JP;

Inventors:

Akio Kawabata, Kawasaki, JP;

Mizuhisa Nihei, Kawasaki, JP;

Masahiro Horibe, Tsukuba, JP;

Shintaro Sato, Kawasaki, JP;

Daiyu Kondo, Kawasaki, JP;

Yuji Awano, Kawasaki, JP;

Assignee:

Fujitsu Limited, Kawasaki, JP;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 23/48 (2006.01); H01L 23/52 (2006.01); H01L 29/40 (2006.01);
U.S. Cl.
CPC ...
Abstract

A Ti film is pattern-formed on a desired portion on a silicon substrate, and a Co film is formed on the substrate so as to cover the Ti film. CNTs are formed only on a portion, under which the Ti film is formed, of the surface of the Co film at approximately 600° C. by a thermal CVD method. The length of the CNT can be controlled by adjusting the thickness of the Ti film.


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