High voltage insulated-gate transistor

Abstract

An insulated-gate transistor, includes a semiconductor material layer having a front surface, a body region, an insulated gate disposed over the body region with interposition of a gate dielectric, and a source and drain region, the source region formed in the body region and the drain region formed in the semiconductor material layer. The source and drain regions are spaced apart from each other by a channel zone in a portion of the body region underlying the insulated gate, and a charge carriers drift portion of the semiconductor material layer between the channel zone and the drain region, the insulated gate extending over the charge carriers drift portion. The drain region is located at a depth compared to the front surface for causing charge carriers to move in the charge carriers drift portion away from an interface between the semiconductor material layer and the gate dielectric.