The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 26, 2008
Filed:
May. 11, 2006
Zvonimir Z. Bandic, San Jose, CA (US);
Bernhard E. Knigge, San Jose, CA (US);
Charles Mathew Mate, San Jose, CA (US);
Zvonimir Z. Bandic, San Jose, CA (US);
Bernhard E. Knigge, San Jose, CA (US);
Charles Mathew Mate, San Jose, CA (US);
Hitachi Global Storage Technologies Netherlands B. V., Amsterdam, NL;
Abstract
A method for patterning and forming very small structures on a substrate such as a wafer. The process uses a difference in surface energy between a mask and the substrate to selectively deposit a hard mask material such as a metal onto the surface of the substrate. The mask can be formed extremely thin, such as only an atomic mono-layer thick, and can be patterned by ion beam photolithography. The pattern can, therefore, be formed with extremely high resolution. The thin mask layer can be constructed of various materials and can be constructed of perfluorpolyether diacrylate (PDA), which can be dip coated to and exposed to form a desirable positive photoresist mask layer.