The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 26, 2008
Filed:
Sep. 05, 2006
Huilong Zhu, Poughkeepsie, NY (US);
Shih-fen Huang, Bronxville, NY (US);
Effendi Leobandung, Wappingers Falls, NY (US);
Huilong Zhu, Poughkeepsie, NY (US);
Shih-Fen Huang, Bronxville, NY (US);
Effendi Leobandung, Wappingers Falls, NY (US);
International Business Machines Corporation, Armonk, NY (US);
Abstract
A test structure for detecting void formation in semiconductor device layers includes a plurality of active device areas formed in a substrate, a plurality of shallow trench isolation (STI) regions separating the active device areas, a plurality of gate electrode structures formed across the active device areas and the STI regions, and a matrix of vias formed over the active device areas and between the gate electrode structures. At least one edge of each of a pair of vias at opposite ends of a given one of the STI regions extends at least out to an edge of the associated active device area.