The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 19, 2008
Filed:
Jan. 31, 2005
Martin B. Mollat, McKinney, TX (US);
Milind V. Khandekar, Plano, TX (US);
Tony T. Phan, Flower Mound, TX (US);
Kyle M. Flessner, Richardson, TX (US);
Martin B. Mollat, McKinney, TX (US);
Milind V. Khandekar, Plano, TX (US);
Tony T. Phan, Flower Mound, TX (US);
Kyle M. Flessner, Richardson, TX (US);
Texas Instruments incorporated, Dallas, TX (US);
Abstract
The present invention provides a method for analyzing critical defects in analog integrated circuits. The method for analyzing critical defects, among other possible steps, may include fault testing a power field effect transistor () portion of an analog integrated circuit () to obtain electrical failure data. The method may further include performing an in-line optical inspection of the analog integrated circuit () to obtain physical defect data, and correlating the electrical failure data and physical defect data to analyze critical defects.