The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 7414953 B1

PDF
Full Text
Expired
Date of Patent:
Aug. 19, 2008

Filed:

Apr. 05, 2007
Applicants:

Thomas F. Rust, Oakland, CA (US);

Robert N. Stark, Saratoga, CA (US);

Thomas L. Noggle, Oakland, CA (US);

Daniel F. Cribbs, Los Gatos, CA (US);

Inventors:

Thomas F. Rust, Oakland, CA (US);

Robert N. Stark, Saratoga, CA (US);

Thomas L. Noggle, Oakland, CA (US);

Daniel F. Cribbs, Los Gatos, CA (US);

Assignee:

Nanochip, Inc., Fremont, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11B 9/00 (2006.01);
U.S. Cl.
CPC ...
Abstract

A data storage device comprises a media including a memory layer within which are formable domains associated with information, and a conductive layer disposed over the memory layer, the conductive layer having anisotropically increased electrical conductivity in a thickness direction. A conductive tip contactable with the conductive layer is adapted to form domains within the memory layer and one of the conductive tip and the media is movable to access the memory layer.


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Rust, Thomas. (2008). Memory having a layer with electrical conductivity anisotropy (U.S. Patent No. 7414953). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/7414953

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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