The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 7414899 B1

PDF
Full Text
Expired
Date of Patent:
Aug. 19, 2008

Filed:

Apr. 28, 2006
Applicants:

Jong Hoon OH, Chapel Hill, NC (US);

Alan Deng, Morrisville, NC (US);

Inventors:

Jong Hoon Oh, Chapel Hill, NC (US);

Alan Deng, Morrisville, NC (US);

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 7/00 (2006.01);
U.S. Cl.
CPC ...
Abstract

A synchronous DRAM (SDRAM) terminates a write operation in response to detecting deactivation of a data strobe signal applied to it during the write operation. In one example, the SDRAM comprises a buffer circuit and an early write termination circuit. The buffer circuit is configured to sample input data responsive to a data strobe signal applied to the SDRAM during a write operation and direct the input data to one or more memory cells of the SDRAM for storing the input data. The early write termination circuit is configured to terminate the write operation at less than a programmed burst length by disabling access to one or more of the memory cells after storage of the sampled input data responsive to detecting deactivation of the data strobe signal.


Find Patent Forward Citations

Oh, Jong. (2008). Method and apparatus for early write termination in a semiconductor memory (U.S. Patent No. 7414899). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/7414899

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