The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 19, 2008
Filed:
May. 18, 2005
Sei-hyung Ryu, Cary, NC (US);
Jason R. Jenny, Wake Forest, NC (US);
Mrinal K. Das, Durham, NC (US);
Hudson Mcdonald Hobgood, Pittsboro, NC (US);
Anant K. Agarwal, Chapel Hill, NC (US);
John W. Palmour, Cary, NC (US);
Sei-Hyung Ryu, Cary, NC (US);
Jason R. Jenny, Wake Forest, NC (US);
Mrinal K. Das, Durham, NC (US);
Hudson McDonald Hobgood, Pittsboro, NC (US);
Anant K. Agarwal, Chapel Hill, NC (US);
John W. Palmour, Cary, NC (US);
Cree, Inc., Durham, NC (US);
Abstract
Silicon carbide high voltage semiconductor devices and methods of fabricating such devices are provided. The devices include a voltage blocking substrate. Insulated gate bipolar transistors are provided that have a voltage blocking substrate. Planar and beveled edge termination may be provided.