The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 19, 2008
Filed:
Apr. 14, 2004
Nobuyuki Otsuka, Kawanishi, JP;
Koichi Mizuno, Nara, JP;
Shigeo Yoshii, Hirakata, JP;
Asamira Suzuki, Osakai, JP;
Nobuyuki Otsuka, Kawanishi, JP;
Koichi Mizuno, Nara, JP;
Shigeo Yoshii, Hirakata, JP;
Asamira Suzuki, Osakai, JP;
Matsushita Electric Industrial Co., Ltd., Osaka, JP;
Abstract
A ballistic semiconductor device of the present invention comprises a n-type emitter layer (), a base layer () made of n-type InGaN, a n-type collector layer (), an emitter barrier layer () interposed between the emitter layer () and the base layer () and having a band gap larger than that of the base layer (), and a collector barrier layer () interposed between the base layer () and the collector layer () and having a band gap larger than that of the base layer (), and operates at 10 GHz or higher.