The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 19, 2008
Filed:
Aug. 28, 2006
Chan Woo Park, Daejeon-Shi, KR;
Sung Yool Choi, Daejeon-Shi, KR;
Sang Ouk Ryu, Daejeon-Shi, KR;
Han Young Yu, Daejeon-Shi, KR;
Ung Hwan Pi, Daejeon-Shi, KR;
Tae Hyoung Zyung, Daejon-Shi, KR;
Chan Woo Park, Daejeon-Shi, KR;
Sung Yool Choi, Daejeon-Shi, KR;
Sang Ouk Ryu, Daejeon-Shi, KR;
Han Young Yu, Daejeon-Shi, KR;
Ung Hwan Pi, Daejeon-Shi, KR;
Tae Hyoung Zyung, Daejon-Shi, KR;
Electronics and Telecommunications Research Institute, Daejon-shi, KR;
Abstract
Provided is a method for manufacturing a nano-gap electrode device comprising the steps of: forming a first electrode on a substrate; forming a spacer on a sidewall of the first electrode; forming a second electrode on an exposed substrate at a side of the spacer; and forming a nano-gap between the first electrode and the second electrode by removing the spacer, whereby it is possible to control the nano-gap position, width, shape, and etc., reproducibly, and manufacture a plurality of nano-gap electrode devices at the same time.