The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 19, 2008
Filed:
Sep. 21, 2005
Hirotoshi Kubo, Ora-gun, JP;
Junichiro Tojo, Hashima, JP;
Hiroaki Saito, Ota, JP;
Masahito Onda, Ora-gun, JP;
Satoshi Iwata, Ora-gun, JP;
Masamichi Yanagida, Ota, JP;
Hirotoshi Kubo, Ora-gun, JP;
Junichiro Tojo, Hashima, JP;
Hiroaki Saito, Ota, JP;
Masahito Onda, Ora-gun, JP;
Satoshi Iwata, Ora-gun, JP;
Masamichi Yanagida, Ota, JP;
Sanyo Electric Co., Ltd., Osaka, JP;
Abstract
A capacity layer is formed of non-doped polysilicon. Unlike capacity layers formed of an oxide film, generation of seams and the like can be suppressed and thereby a stable capacity layer can be formed. Moreover, polysilicon used as a capacity layer may be doped polysilicon, and an oxide film formed on the surface of the polysilicon also serves as a capacity film. Thus, provision of an insulated gate device featuring low capacity is made possible.