The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 19, 2008
Filed:
Dec. 30, 2005
Applicant:
Sang Gi Lee, Bucheon, KR;
Inventor:
Sang Gi Lee, Bucheon, KR;
Assignee:
Dongbu Electronics Co., Ltd., Seoul, KR;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/8238 (2006.01);
U.S. Cl.
CPC ...
Abstract
In a CMOS image sensor manufacturing process, heavily doped p type impurity ions (for example, B) are implanted in a dummy moat region when the heavily doped p type impurity ions is implanted in a PMOS transistor region, so that metal ion contamination is removed. Accordingly, a CMOS image sensor capable of reducing a leakage current by gettering metal ion contamination is provided.
Lee, Sang. (2008). Cmos image sensor and method of manufacturing the same (U.S. Patent No. 7413944). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/7413944
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile