The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 19, 2008
Filed:
Apr. 25, 2006
Byung-jun Park, Suwon-si, KR;
Byung-Jun Park, Suwon-si, KR;
Samsung Electronics Co., Ltd., Suwon-Si, KR;
Abstract
A method of manufacturing an image sensor comprises forming an isolation layer defining an active region in a semiconductor substrate using a first mask pattern formed on the semiconductor substrate, forming a first ion implantation mask pattern by reducing a width of the first mask pattern to expose an edge portion of the active region around the isolation layer, forming a first hole accumulation region by implanting a first conductive type of impurity ions into the edge portion of the active region using the first ion implantation mask pattern, forming a second ion implantation mask pattern covering the isolation layer and the first hole accumulation region, and forming a photodiode by implanting a second conductive type of impurity ions into a region of the semiconductor substrate using the second ion implantation mask pattern, wherein at least a portion of the region is surrounded by the first hole accumulation region in the active region.