The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 19, 2008

Filed:

Nov. 15, 2004
Applicants:

John M. Maloney, Cambridge, MA (US);

Zouhair Sbiaa, Malden, MA (US);

John T. Santini, Jr., North Chelmsford, MA (US);

Norman F. Sheppard, Jr., Bedford, MA (US);

Scott A. Uhland, Roslindale, MA (US);

Inventors:

John M. Maloney, Cambridge, MA (US);

Zouhair Sbiaa, Malden, MA (US);

John T. Santini, Jr., North Chelmsford, MA (US);

Norman F. Sheppard, Jr., Bedford, MA (US);

Scott A. Uhland, Roslindale, MA (US);

Assignee:

MicroCHIPS, Inc., Bedford, MA (US);

Attorneys:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
G03F 7/20 (2006.01);
U.S. Cl.
CPC ...
Abstract

Methods are provided for making a multi-reservoir device comprising (i) patterning one or more photoresist layers on a substrate; (ii) depositing onto the substrate at least one metal layer by a sputtering process to form a plurality of reservoir caps and conductive traces; (iii) removing the photoresist layers using a liftoff process; (iv) forming a plurality of reservoirs in the substrate; (v) loading each reservoir with reservoir contents (such as a drug or sensor); and (vi) sealing each reservoir. Optionally, the reservoir cap comprises a first conductive metal layer coated with one or more protective noble metal films. To enhance the resistance of the substrate (e.g., a silicon substrate) to etching in vivo, the interior sidewalls of the reservoirs optionally can include a protective coating (e.g., gold, platinum, carbon, silicon carbide, silicon dioxide, and platinum silicide), or sidewalls comprising silicon can be doped with boron or another impurity.


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