The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 19, 2008
Filed:
Nov. 14, 2003
Ching-hsun Chao, Kaohsiung, TW;
Jyh-rong Sheu, Hsinchu, TW;
Liang-yu Chiang, Taipei Hsien, TW;
Yu-yang Chang, Tainan, TW;
Cheng-chung Lee, Taitung, TW;
Ching-Hsun Chao, Kaohsiung, TW;
Jyh-Rong Sheu, Hsinchu, TW;
Liang-Yu Chiang, Taipei Hsien, TW;
Yu-Yang Chang, Tainan, TW;
Cheng-Chung Lee, Taitung, TW;
Industrial Technology Research Institute, Hsinchu, TW;
Abstract
A method of transferring imprint carbon nano-tube (CNT) field emitting source is disclosed. Firstly, cathode lines are screen printed on a substrate. Then a dielectric layer formation on the cathode lines and substrate is followed. Afterward, gate lines formed on the dielectric layer by screen printing are performed. Next a patterning process is carried out to form openings. Subsequently, an imprint negative mold is dipped with CNT paste and imprinted the CNT paste on the cathode lines through the openings. After drawing of pattern from the imprint mold, the CNT paste is cured by annealing. Since the emitting sources are formed through the imprint negative mold, as a result, the size and shape can be predetermined. Moreover, the intervals between gate line and the emitting source are readily control, which resolve the circuit short problem between gate and cathode. Consequently, the current density, brightness, and uniformity of the emitter sources are significantly improved.