The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 12, 2008

Filed:

Nov. 13, 2006
Applicants:

Hyun Sun MO, Seoul, KR;

Ho Jung Kim, Suwon-si, KR;

Inventors:

Hyun Sun Mo, Seoul, KR;

Ho Jung Kim, Suwon-si, KR;

Assignee:

Samsung Electronics Co., Ltd., Suwon-si, Gyeonggi-do, KR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 11/34 (2006.01);
U.S. Cl.
CPC ...
Abstract

A nonvolatile semiconductor memory device comprises a memory array of 3-level nonvolatile memory cells. The memory array comprises first even and odd strings of memory cells connected to respective first even and odd bit lines and second even and odd strings of memory cells connected to respective second even and odd bit lines. The first even and odd bit lines are selectively connected to a first common bit line during data programming and read operations, and the second even and odd bit lines are selectively connected to a second common bit line during data programming and read operations. The device programs and reads data in a pair of memory cells using three bits of data corresponding to three threshold voltage distributions of the 3-level nonvolatile memory cells.


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