The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 12, 2008

Filed:

Aug. 08, 2007
Applicants:

Heather Diane Hudspeth, Clifton Park, NY (US);

Reed Roeder Corderman, Niskayuna, NY (US);

Renee Bushey Rohling, Burnt Hills, NY (US);

Lauraine Denault, Nassau, NY (US);

Inventors:

Heather Diane Hudspeth, Clifton Park, NY (US);

Reed Roeder Corderman, Niskayuna, NY (US);

Renee Bushey Rohling, Burnt Hills, NY (US);

Lauraine Denault, Nassau, NY (US);

Assignee:

General Electric Company, Niskayuna, NY (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01J 1/30 (2006.01); H01J 1/02 (2006.01);
U.S. Cl.
CPC ...
Abstract

The present invention relates to gated nanorod field emission devices, wherein such devices have relatively small emitter tip-to-gate distances, thereby providing a relatively high emitter tip density and low turn on voltage. Such methods employ a combination of traditional device processing techniques (lithography, etching, etc.) with electrochemical deposition of nanorods. These methods are relatively simple, cost-effective, and efficient; and they provide field emission devices that are suitable for use in x-ray imaging applications, lighting applications, flat panel field emission display (FED) applications, etc.


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