The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 12, 2008
Filed:
Aug. 02, 2006
Nobuyuki Kawakami, Kobe, JP;
Toshihiro Kugimiya, Kobe, JP;
Hiroshi Gotoh, Kobe, JP;
Katsufumi Tomihisa, Kobe, JP;
Aya Hino, Kobe, JP;
Nobuyuki Kawakami, Kobe, JP;
Toshihiro Kugimiya, Kobe, JP;
Hiroshi Gotoh, Kobe, JP;
Katsufumi Tomihisa, Kobe, JP;
Aya Hino, Kobe, JP;
Kabushiki Kaisha Kobe Seiko Sho (Kobe Steel, Ltd.), Kobe-shi, JP;
Abstract
A source/drain electrode is used in a thin-film transistor substrate containing a substrate, a thin-film transistor semiconductor layer, source/drain electrodes, and a transparent picture electrode. The source/drain electrode includes a nitrogen-containing layer and a thin film of pure aluminum or an aluminum alloy. Nitrogen of the nitrogen-containing layer binds to silicon of the thin-film transistor semiconductor layer, and the thin film of pure aluminum or aluminum alloy is connected to the thin-film transistor semiconductor layer through the nitrogen-containing layer.