The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 7411275 B1

PDF
Full Text
Expired
Date of Patent:
Aug. 12, 2008

Filed:

Jun. 27, 2002
Applicant:

Yoshiaki Oku, Kyoto, JP;

Inventor:

Yoshiaki Oku, Kyoto, JP;

Assignee:

Rohm Co., Ltd., Kyoto, JP;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 23/58 (2006.01);
U.S. Cl.
CPC ...
Abstract

It is an object to provide an insulating film having a very low dielectric constant and a great mechanical strength. Moreover, it is another object to provide a semiconductor device capable of reducing both a capacity between wiring layers and a capacity between wirings also in microfabrication and an increase in integration in the semiconductor device. In order to attain the objects, there is provided an inorganic insulating film comprising a porous structure having a skeletal structure in which a vacancy is arranged periodically and a large number of small holes are included.


Find Patent Forward Citations

Oku, Yoshiaki. (2008). Semiconductor device comprising an inorganic insulating film and method of manufacturing the same (U.S. Patent No. 7411275). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/7411275

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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