Semiconductor integrated circuit device capacitive node interconnect

Abstract

A semiconductor integrated circuit device is provided, which involves inhibiting a pattern change in the node interconnect and an increase of number of manufacturing process, when the capacitor is additionally installed in the SRAM, while providing higher reliability in the node interconnect. There is provided a semiconductor integrated circuit device, comprising: a node interconnect (lower capacitance electrode), being embedded in a trench formed in an interlayer insulating film provided on a semiconductor substrate, a surface of said lower capacitance electrode being formed to be substantially coplanar to a surface of the interlayer insulating film; and a capacitor, including: a capacitance insulating film, being flatly formed on a surface of the interlayer insulating film; and an upper capacitance electrode, being flatly formed thereon. Since the surface of the node interconnect is flat, forming thinner films of the capacitance insulating film and the upper capacitance electrode can be achieved, and the reliability of the capacitor is improved, and the planarization of the upper layer interconnects can be planarized to provide a miniaturization thereof.