The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 12, 2008
Filed:
Jul. 14, 2006
Kazuya Matsuzawa, Kawasaki, JP;
Kazuya Matsuzawa, Kawasaki, JP;
Kabushiki Kaisha Toshiba, Tokyo, JP;
Abstract
A semiconductor storage device has a first transistor of first conductive type which control data writing, a second transistor of second conductive type which controls data read-out, a third transistor which amplifies a current corresponding to data to be read out, a first semiconductor layer which is disposed in a predetermined direction, in which a gate of the first transistor is formed, a second semiconductor layer which is disposed separately from the first semiconductor layer in the predetermined direction, in which source and drain of the second transistor and source and drain of the third transistor are formed, a write transistor forming region which is disposed in a direction intersecting the first and second semiconductor layers, in which source and drain of the first transistor, a gate of the third transistor and an electric charge storing region storing electric charge in accordance with data to be written are formed, and a read-out transistor gate region which is disposed in a direction intersecting the first and second semiconductor layers, in which a gate of the second transistor is formed.