The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 12, 2008
Filed:
Mar. 18, 2005
Applicants:
William F. Seng, Philomont, VA (US);
Richard L. Woodin, North Yarmouth, ME (US);
Carl Anthony Witt, Gorham, ME (US);
Inventors:
William F. Seng, Philomont, VA (US);
Richard L. Woodin, North Yarmouth, ME (US);
Carl Anthony Witt, Gorham, ME (US);
Assignee:
Fairchild Semiconductor Corporation, South Portland, ME (US);
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/15 (2006.01);
U.S. Cl.
CPC ...
Abstract
A Schottky barrier silicon carbide device has a Re Schottky metal contact. The Re contactis thicker than 250 Angstroms and may be between 2000 and 4000 Angstroms. A termination structure is provided by ion milling an annular region around the Schottky contact.
Seng, William. (2008). Method and device with durable contact on silicon carbide (U.S. Patent No. 7411218). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/7411218
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile