The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 12, 2008
Filed:
May. 23, 2006
Christopher Monroe, Ann Arbor, MI (US);
Daniel Stick, Ann Arbor, MI (US);
Martin Madsen, Ann Arbor, MI (US);
Winfried Hensinger, Ann Arbor, MI (US);
Keith Schwab, Ithaca, NY (US);
Christopher Monroe, Ann Arbor, MI (US);
Daniel Stick, Ann Arbor, MI (US);
Martin Madsen, Ann Arbor, MI (US);
Winfried Hensinger, Ann Arbor, MI (US);
Keith Schwab, Ithaca, NY (US);
The Regents of the University of Michigan, Ann Arbor, MI (US);
Abstract
A micrometer-scale ion trap, fabricated on a monolithic chip using semiconductor micro-electromechanical systems (MEMS) technology. A single 111Cd+ ion is confined, laser cooled, and the heating measured in an integrated radiofrequency trap etched from a doped gallium arsenide (GaAs) heterostructure. Single 111Cd+ qubit ions are confined in a radiofrequency linear ion trap on a semiconductor chip by applying a combination of static and oscillating electric potentials to integrated electrodes. The electrodes are lithographically patterned from a monolithic semiconductor substrate, eliminating the need for manual assembly and alignment of individual electrodes. The scaling of this structure to hundreds or thousands of electrodes is possible with existing semiconductor fabrication technology.