The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 12, 2008
Filed:
Apr. 15, 2005
Dietmar Temmler, Dresden, DE;
Dietmar Temmler, Dresden, DE;
Infineon Technologies AG, Munich, DE;
Abstract
A method for fabricating a trench includes providing a semiconductor substrate made of a semiconductor material. A trench is etched into a surface of the semiconductor substrate such that a trench wall is produced. At least one layer is provided on the trench wall. This step is performed in such a way that the topmost layer provided on the trench wall is constructed from a sealing material. A selective epitaxy method is carried out in such a way that a monocrystalline semiconductor layer is formed on the surface of the semiconductor substrate and preferably no semiconductor material grows directly on the sealing material. A partial trench is etched in a surface of the epitaxially grown semiconductor layer. This step is performed in such a way that at least part of the layer made of the sealing material is uncovered. An uncovered part of the layer made of the sealing material is then removed.