The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 12, 2008
Filed:
Jul. 12, 2007
Hans Joachim Quenzer, Itzehoe, DE;
Peter Merz, Beldorf, DE;
Marten Oldsen, Hamburg, DE;
Wolfgang Reinert, Neumuenster, DE;
Hans Joachim Quenzer, Itzehoe, DE;
Peter Merz, Beldorf, DE;
Marten Oldsen, Hamburg, DE;
Wolfgang Reinert, Neumuenster, DE;
Abstract
A method of creating a predefined internal pressure within a cavity of a semiconductor device, the method including providing the semiconductor device, the semiconductor device including a semiconductor oxide area which is continuously arranged between the cavity of the semiconductor device and an external surface of the semiconductor device, exposing the semiconductor device to an ambient atmosphere with a noble gas at a first temperature for a predetermined time period, and setting a second temperature, which is different from the first, after the predetermined time period has expired, the semiconductor oxide area exhibiting a higher permeability for the noble gas at the first temperature than at the second temperature.