The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 12, 2008

Filed:

Mar. 14, 2005
Applicants:

Jae-ho Kim, Seoul, KR;

Sang-joon Park, Daejeon, KR;

Inventors:

Jae-Ho Kim, Seoul, KR;

Sang-Joon Park, Daejeon, KR;

Assignee:

IPS Ltd., Gyeonggi-do, KR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H05H 1/24 (2006.01);
U.S. Cl.
CPC ...
Abstract

A chemical vapor deposition method comprises steps of: a) injecting a source gas into a chamber so that the source gas is adsorbed on a substrate; b) injecting a purge gas into the chamber for a predetermined period of time so that the source gas remaining in the chamber is purged; c) injecting a reactant gas into a plasma generating portion, and generating plasma at the plasma generating portion by applying a first-level RF power source to a RF electrode plate so that radical of the reactant gas is adsorbed on the substrate; d) injecting a purge gas into the chamber for a predetermined period of time so that the reactant gas remaining in the chamber is purged; and e) applying a second-level RF power source to the plasma generating portion at the step a), b) and d) while the steps a) to d) are being repeated.


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